Reactive ion etching

نویسندگان

  • W. S. Hobson
  • F. A. Baiocchi
چکیده

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6/H2 etching provided the composition of the plasma is no more than 10%-20% by volume of C2H6 • At higher ethane compositions, polymer formation increases leading to micromasking and rough surface morphologies. Subsurface disorder is limited to < 300 A deep for both gas chemistries for plasma power densities of 0.85 W cm2 .The C2H6/H2 mixture leaves an In-rich surface in all cases, but this surface is free of any contamination, whereas the CC12F2/02 chemistry leaves chlorofluorocarbon residues 20-50 A thick on the surface of all three In-based materials.

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تاریخ انتشار 2011